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Ordering number : ENA1507A
ATP212
N-Channel Power MOSFET
60V, 35A, 23m Ω , Single ATPAK
Features
http://onsemi.com
?
?
?
Low ON-resistance
4V drive
Halogen free compliance
?
?
?
Large current
Slim package
Protection diode in
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
60
±20
35
Unit
V
V
A
Drain Current (PW ≤ 10 μ s)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
IDP
PD
Tch
Tstg
EAS
IAV
PW ≤ 10 μ s, duty cycle ≤ 1%
Tc=25 ° C
105
40
150
--55 to +150
19
18
A
W
° C
° C
mJ
A
Note : * 1 VDD=10V, L=100 μ H, IAV=18A
* 2 L ≤ 100 μ H, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7057-001
ATP212-TL-H
Product & Package Information
? Package : ATPAK
? JEITA, JEDEC : -
? Minimum Packing Quantity : 3,000 pcs./reel
6.5
1.5
4.6
Packing Type: TL
Marking
2.6
4
0.4
0.4
ATP212
LOT No.
TL
Electrical Connection
2,4
1
2
3
0.55
0.8
0.6
0.4
1 : Gate
2.3
2.3
2 : Drain
3 : Source
1
4 : Drain
Semiconductor Components Industries, LLC, 2013
July, 2013
ATPAK
3
61312 TKIM/62409PA TKIM TC-00001998 No. A1507-1/7
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